Carrier Emission and Recombination
- 1 January 1983
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Determination of the free energy level of deep centers, with application to GaAsApplied Physics Letters, 1980
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Admittance of p-n junctions containing trapsSolid-State Electronics, 1972
- THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICONApplied Physics Letters, 1969
- The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centersProceedings of the IEEE, 1967
- Cascade Capture of Electrons by Ionized ImpuritiesPhysical Review B, 1964
- Recombination of electrons and donors in semiconductorsJournal of Physics and Chemistry of Solids, 1961
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960
- Optical and Impact Recombination in Impurity Photoconductivity in Germanium and SiliconPhysical Review B, 1955
- Quantenmechanik der Sto vorg ngeThe European Physical Journal A, 1926