Improved CMOS field isolation using germanium/boron implantation
- 1 August 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (8) , 391-393
- https://doi.org/10.1109/55.754
Abstract
A novel germanium/boron implantation technique for improving the electrical field isolation of high-density CMOS circuits is demonstrated. Germanium implantation causes a reduction in dopant diffusion and segregation during field oxidation and is shown to increase the p-well field threshold voltage by as much as 40% with no significant degradation to junction or device performance. Selective germanium implantation with a blanket boron field implant can also improve the electrical field isolation behavior for CMOS circuits.Keywords
This publication has 2 references indexed in Scilit:
- Anomalous co-diffusion effects of germanium on group III and V dopants in siliconApplied Physics Letters, 1988
- Novel germanium/boron channel-stop implantation for submicron CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987