AlGaAs/GaAs double-heterojunction high electron mobility transistors grown by low-pressure organometallic vapor phase epitaxy
- 1 January 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (1) , 550-552
- https://doi.org/10.1063/1.345244
Abstract
AlGaAs/GaAs double-heterojunction high electron mobility transistors (DHHEMTs) grown by low-pressure organometallic vapor phase epitaxy are reported in this communication. The magnetic field-dependent Hall effect measurement was used to characterize the sheet carrier density and electron mobility of the two-dimensional electron gas (2-DEG). At 77 K the sheet carrier density and the electron mobility were 1.38×1012 cm−2 and 52 900 cm2 /V s, respectively, in a DHHEMT structure with an undoped Al0.28Ga0.72As spacer layer of 120 Å, while they were 7.12×1011 cm−2 and 65 100 cm2 /V s, respectively, in a comparable single-heterojunction HEMT structure. DHHEMT’s with 0.5-μm-gate length and 75-μm-gate width have been fabricated with dc saturation current of 500 mA/mm and dc transconductance of 250 mS/mm. These results are comparable to those produced with molecular-beam epitaxy.This publication has 7 references indexed in Scilit:
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