Radiation-induced reverse dark currents in In0.53Ga0.47As photodiodes
- 1 June 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (11) , 7244-7249
- https://doi.org/10.1063/1.354012
Abstract
The reverse dark current‐voltage (dark I‐V) curves of InGaAs photodiodes have been measured as a function of temperature following irradiation with 1‐MeV electrons. Prior to irradiation, the I‐V curves are well described by a diffusion term alone indicating that the junctions are of good quality. Irradiation produces a large increase in the generation current which can be modelled as resulting from a single defect center with an energy Ec−0.29 eV. Such a defect center called E2 has been detected using deep level transient spectroscopy.This publication has 7 references indexed in Scilit:
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