Trap-assisted tunneling in mercury cadmium telluride photodiodes
- 20 July 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (3) , 330-332
- https://doi.org/10.1063/1.107927
Abstract
Trap-assisted tunneling in Hg1−xCdxTe photodiodes (with x≂0.22) is modeled quantitatively. The model takes into consideration two types of deep traps: one type of energy trap is located at Et1≂40 meV (∼Eg/3) and the other type is located at Et2≂75 meV (∼2Eg/3). The density of trapped electrons at Et1∼Eg/3 is relatively high (nt1≂1014 cm−3) and is practically independent of temperature while the density of the trapped electrons at Et2≂2Eg/3 is low (nt2≂1010–1012 cm−3) and increases with temperature. An excellent fit is systematically obtained between the calculated and measured dc dark current characteristics of typical ion implanted n+p photodiodes, in a wide range of reverse bias voltages (0<Vd<−1.5 V) and operating temperatures (30–120 K).Keywords
This publication has 7 references indexed in Scilit:
- Tunneling and 1/f noise currents in HgCdTe photodiodesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Measurement and modeling of the fast collapse of HgCdTe metal-insulator-semiconductor devicesApplied Physics Letters, 1991
- Trapping effects in HgCdTeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Tunneling and dark currents in HgCdTe photodiodesJournal of Vacuum Science & Technology A, 1989
- Dark current generation mechanisms and spectral noise current in long-wavelength infrared photodiodesJournal of Vacuum Science & Technology A, 1988
- Band‐to‐band tunnel processes in HgCdTe: Comparison of experimental and theoretical studiesJournal of Vacuum Science & Technology A, 1988
- Gate-controlled Hg1−xCdxTe photodiodes passivated with native sulfidesJournal of Vacuum Science & Technology A, 1986