Extraction of density profile for near perfect multilayers

A simple inversion scheme, based on Born approximation, to determine the electron density profile of near perfect multilayers from specular x-ray reflectivity data has been presented. This scheme is useful for semiconductor multilayers and other thin films, which are grown almost according to the designed parameters. We also indicate the possibility of separating out the contribution of interdiffusion and roughness in electron density profiles of interfaces by utilizing information obtained from the analysis of diffuse scattering data. The extracted compositional profile was used to calculate structural details of epitaxial films along the growth direction. Simulated and metal organic vapor phase epitaxy grown ${\mathrm{I}\mathrm{n}\mathrm{P}/\mathrm{I}\mathrm{n}}_x{\mathrm{Ga}}_{1-x}\mathrm{A}\mathrm{s}/\mathrm{I}\mathrm{n}\mathrm{P}$ quantum-well systems have been used to demonstrate this scheme.