Photoluminescence and electrical studies of Si-doped AlxGa1−xAs grown on various substrate orientations by metalorganic chemical vapor deposition

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Abstract
The photoluminescence and electrical behavior of Si‐doped AlxGa1−xAs has been investigated on various GaAs substrate orientations viz. (100)2°(110), (111)Ga, and (110). The growth has been performed by metalorganic chemical vapor deposition with a systematic variation of the silane input mole fraction, the V/III ratio and the aluminum fraction. It is found that the (110) layers show an abnormal electrical behavior especially in carrier concentration and mobility. On these layers also two new PL peaks have been found. By correlating all possible pair defects with the peaks as a function of the experimental conditions, these two peaks could be assigned to originate from a VAs‐AsGa complex and a VAs‐SiAs or VAs‐SiGa complex. The abnormal electrical results for (110) can be explained by the presence of these complexes.