Initial stages of atomic hydrogen chemisorption on GaAs(110): a high resolution photoemission study
- 1 May 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 269-270, 893-901
- https://doi.org/10.1016/0039-6028(92)91366-j
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Chemisorption of H on GaAs(110): a First-Principles CalculationEurophysics Letters, 1990
- High-resolution photoemission study of the interaction of hydrogen with GaAs(110) surfacesPhysical Review B, 1990
- Spontaneous Hydrogen Injection into SiliconMaterials Science Forum, 1989
- Hydrogen detection at thin film—silicon interfacesSurface and Interface Analysis, 1989
- Core-level photoemission studies of MBE-grown semiconductor surfacesPhysica B+C, 1983
- Theoretical investigation of hydrogen chemisorption on Ga-containing III–V compoundsJournal of Vacuum Science and Technology, 1982
- Conduction-Band Surface Plasmons in the Electron-Energy-Loss Spectrum of GaAs(110)Physical Review Letters, 1981
- Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)Physical Review Letters, 1980
- An ellipsoidal mirror display analyzer system for electron energy and angular measurementsNuclear Instruments and Methods, 1980
- High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of GoldPhysical Review B, 1972