Hydrogen passivation of large-area polycrystalline silicon solar cells by high-current ion implantation
- 1 January 1988
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1600-1603 vol.2
- https://doi.org/10.1109/pvsc.1988.105982
Abstract
The fabrication of highly efficient, large-area polycrystalline silicon solar cells using ion implantation as a hydrogen passivation technique is presented. The development of a high-current ion implanter with a bucket-type ion source to hydrogenate crystal defects in cast polycrystalline cells is also presented. Effective hydrogen passivation of the defects is realized by implanting hydrogen ions into the back surface of the cells and increasing the hydrogen ion energy and dose. The results show that the polycrystalline cells exhibit a high conversion efficiency of 15.2% for a large area of 100 cm/sup 2/.<>Keywords
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