Passivation of polycrystalline silicon solar cells by low-energy hydrogen ion implantation
- 31 May 1986
- journal article
- Published by Elsevier in Solar Cells
- Vol. 17 (2-3) , 201-231
- https://doi.org/10.1016/0379-6787(86)90013-x
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Some problems arising in hydrogen passivation of silicon by ion bombardment techniquesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Multiple-beam ion implantation setup for large scale treatment of semiconductorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Passivation par l'hydrogène de défauts recombinants dans les photopiles réalisées sur rubans de silicium polycristallin RADRevue de Physique Appliquée, 1984
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Hydrogen passivation of defects in silicon ribbon grown by the edge-defined film-fed growth processApplied Physics Letters, 1983
- Effects of ion beam hydrogenation on silicon solar cell structuresThin Solid Films, 1982
- Passivation of grain boundaries in siliconJournal of Vacuum Science and Technology, 1982
- Optical Properties of Heavily Doped Silicon between 1.5 and 4.1 eVPhysical Review Letters, 1981
- Studies of the hydrogen passivation of silicon grain boundariesJournal of Applied Physics, 1981
- Hydrogen passivation of point defects in siliconApplied Physics Letters, 1980