Electronic structures of InAs self-assembled quantum dots in an axial magnetic field
- 15 August 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (7) , 3561-3564
- https://doi.org/10.1103/physrevb.58.3561
Abstract
The electronic structure of an InAs self-assembled quantum dot in the presence of a perpendicular magnetic field is investigated theoretically. The effect of finite offset, valence-band mixing, and strain are taken into account. The hole levels show strong anticrossings. The large strain and strong magnetic field decrease the effect of mixing between heavy hole and light hole. The hole energy levels have in general a weaker field dependence compared with the corresponding uncoupled levels.Keywords
This publication has 18 references indexed in Scilit:
- Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressureApplied Physics Letters, 1997
- Elastic and other associated properties ofPhysical Review B, 1997
- Electronic structure of InAs/GaAs self-assembled quantum dotsPhysical Review B, 1996
- Volume-expansion-induced lattice instability and solid-state amorphizationPhysical Review B, 1996
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Ultranarrow Luminescence Lines from Single Quantum DotsPhysical Review Letters, 1995
- Visible photoluminescence from N-dot ensembles and the linewidth of ultrasmall As/As quantum dotsPhysical Review B, 1994
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- N-electron ground state energies of a quantum dot in magnetic fieldPhysical Review Letters, 1993
- Spectroscopy of electronic states in InSb quantum dotsPhysical Review Letters, 1989