Volume hologram recording and charge transfer process in Bi12SiO20 and Bi12GeO20
- 1 September 1977
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (9) , 3683-3690
- https://doi.org/10.1063/1.324274
Abstract
Bi12SiO20 and Bi12GeO20 are photoconductive and electro‐optic crystals in which hologram recording is performed using the photorefractive effect; their sensitivity and optical quality are comparable with the high‐resolution photographic plate. Hologram formation and erasure are analyzed in terms of a simple two‐level charge transfer model. The photocarrier’s displacement length, comparable with fringe spacing and the nearly unity quantum efficiency, allows the attainment of the ultimate photosensitivity. The trapping centers concentration being much smaller than the absorption centers concentration, the saturation recording time and diffraction efficiency are found limited only by the trap‐filling mechanism.This publication has 11 references indexed in Scilit:
- High-sensitivity read-write volume holographic storage in Bi12SiO20 and Bi12GeO20 crystalsApplied Physics Letters, 1976
- High photosensitivity volume hologram recording Bi12 SiO20 and Bi12 GeO20 by efficient charge transfer processOptics Communications, 1976
- A television IF acoustic surface wave filter on bismuth silicon oxideProceedings of the IEEE, 1976
- Effect of bulk carriers on PROM sensitivityJournal of Applied Physics, 1975
- High−sensitivity optical recording in KTN by two−photon absorptionApplied Physics Letters, 1975
- Theory of formation of phase holograms in lithium niobateApplied Physics Letters, 1974
- Transport processes of photoinduced carriers in Bi12SiO20Journal of Applied Physics, 1973
- Coupled-Wave Analysis of Holographic Storage in LiNbO3Journal of Applied Physics, 1972
- Electrical and Optical Properties of Bi12SiO20Journal of Applied Physics, 1971
- ELECTRICAL CONTROL OF HOLOGRAPHIC STORAGE IN STRONTIUM-BARIUM NIOBATEApplied Physics Letters, 1969