Microstructural characterization of ?REFEL? (reaction-bonded) silicon carbides
- 1 April 1978
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 13 (4) , 885-904
- https://doi.org/10.1007/bf00570528
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Epitaxial growth of 6H SiC in the temperature range 1320–1390°CJournal of Applied Physics, 1973
- Growth of silicon carbide from liquid silicon by a travelling heater methodJournal of Crystal Growth, 1973
- A review of the structure of silicon carbideActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1969
- Solution grown SiC p-n junctionsJournal of Physics D: Applied Physics, 1969
- Refinement of the crystal structure of SiC type 6HActa Crystallographica, 1967
- Influence of Carbon Transport Kinetics on Solution Growth of β-Silicon Carbide CrystalsJournal of the Electrochemical Society, 1967
- The Growth of Silicon Carbide from Molten SiliconJournal of the Electrochemical Society, 1963
- The Relationship of Alpha and Beta Silicon CarbideJournal of the Electrochemical Society, 1952