Epitaxial growth of 6H SiC in the temperature range 1320–1390°C
- 1 November 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (11) , 5177-5178
- https://doi.org/10.1063/1.1662116
Abstract
High‐quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the growth direction perpendicular to the crystal c axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen. Epitaxial layers up to 80 μm thick were grown at rates of 0.4 μm/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and x‐ray diffraction techniques were used to characterize the grown layers.This publication has 9 references indexed in Scilit:
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