Preparation of aluminum nitride thin films by reactive sputtering and their applications to GHz-band surface acoustic wave devices
- 10 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (2) , 166-168
- https://doi.org/10.1063/1.111553
Abstract
Single crystal aluminum nitride (AlN) thin films were prepared by a low‐temperature reactive sputtering on basal plane sapphire [(001)Al2O3] at a substrate temperature of less than 315 °C. Surface acoustic wave (SAW) characteristics with an interdigital transducer /(001)AlN/(001)Al2O3 structure were investigated. The phase velocity and temperature coefficient of delay time are 5750–5765 m/s and 55–63 ppm/°C at KH=1.2–1.6, respectively. Resonator‐type 1‐GHz‐band SAW filters with its structure were fabricated. The insertion loss and suppression were 23 dB and more than 20 dB, respectively.Keywords
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