Orientation Control of AlN Film by Electron Cyclotron Resonance Ion Beam Sputtering

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Abstract
Orientation control of aluminum nitride (AlN) films deposited on a-SiN/(110)Si was investigated by controlling the assisted nitrogen ion beam. Films were deposited using an electron cyclotron resonance (ECR) dual ion beam sputtering system having an ECR ion gun for irradiation and Kaufman-type ion gun for sputtering. It was found that AlN films with perpendicular and parallel orientation to the substrate could be obtained. These films consisted of micrograins. However, it was confirmed from reflection high energy electron diffraction (RHEED) and selected area electron diffraction (SAED) patterns that the former was c-axis oriented film and the latter was nearly single crystal.