Electrical Nanoprobing of Semiconducting Carbon Nanotubes Using an Atomic Force Microscope
- 29 January 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 92 (4) , 046401
- https://doi.org/10.1103/physrevlett.92.046401
Abstract
We use an atomic force microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM tip serves as a voltage or current probe in three-probe measurement setup. Using the tip as a movable current probe, we investigate the scaling of the device properties with channel length. Using the tip as a voltage probe, we study the properties of the contacts. We find that Au makes an excellent contact in the region, with no Schottky barrier. In the region, large contact resistances were found which dominate the transport properties.
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This publication has 28 references indexed in Scilit:
- Field-Modulated Carrier Transport in Carbon Nanotube TransistorsPhysical Review Letters, 2002
- Transport through the interface between a semiconducting carbon nanotube and a metal electrodePhysical Review B, 2002
- High Performance Electrolyte Gated Carbon Nanotube TransistorsNano Letters, 2002
- Synthesis of Ultralong and High Percentage of Semiconducting Single-walled Carbon NanotubesNano Letters, 2002
- High-Mobility Nanotube Transistor MemoryNano Letters, 2002
- Nonlinear Resistance versus Length in Single-Walled Carbon NanotubesPhysical Review Letters, 2002
- Logic Circuits with Carbon Nanotube TransistorsScience, 2001
- Carbon Nanotube Inter- and Intramolecular Logic GatesNano Letters, 2001
- Nanotube Molecular Wires as Chemical SensorsScience, 2000
- Development of an energy barrier at the metal-chain–metallic-carbon-nanotube nanocontactPhysical Review B, 1999