Photoluminescence Mapping and Rutherford Backscattering Spectrometry of InGaN Epilayers
- 9 November 1999
- journal article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 216 (1) , 171-174
- https://doi.org/10.1002/(sici)1521-3951(199911)216:1<171::aid-pssb171>3.0.co;2-#
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Extended X-Ray Absorption Fine Structure (EXAFS) of InN and InGaNPhysica Status Solidi (b), 1999
- Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling studyApplied Physics Letters, 1999
- Exciton localization and the Stokes’ shift in InGaN epilayersApplied Physics Letters, 1999
- Origin of Luminescence from InGaN DiodesPhysical Review Letters, 1999
- Large band gap bowing of InxGa1−xN alloysApplied Physics Letters, 1998
- High Indium Content Ingan Films and Quantum Wells.MRS Proceedings, 1997
- Solid phase immiscibility in GaInNApplied Physics Letters, 1996