Avalanche noise in submicrometre pin diodes
- 3 July 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (14) , 1257-1258
- https://doi.org/10.1049/el:19970828
Abstract
It is shown that recent measurements of noise suppression in thin GaAs pin diodes by Hu et al. can be explained as a dead space phenomenon and are consistent with the α/β ratio approaching unity at high electric fields.Keywords
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