Decay schemes of ${}^{30}{Al}$ , ${}^{30}P$ , and ${}^{20}O$

{}^{30}{Al}

was produced in the

{}^{18}O ({}^{18}O, α p n) {}^{30}{Al}

reaction by bombarding a

{Ta}_{2}

{}^{18}O_{5}

target with 42-MeV

{}^{18}O

ions. Following transfer of the target in a shuttle system the

γ

-ray spectrum was measured in a Ge(Li) detector. Nine

γ

-ray transitions were observed in

{}^{30}{Si}

and have been fitted to an

{}^{30}{Al}

decay scheme that includes five

β

-ray branches to excited states of

{}^{30}{Si}

. The half-life of

{}^{30}{Al}

is 3.685±0.032 sec.

{}^{30}P

was formed in the

{}^{30}{Si} (p, n) {}^{30}P

reaction and a value of 2.499±0.008 min was obtained for its half-life. The

β^{+}

branching of

{}^{30}P

to the 2235-keV first excited state of

{}^{30}{Si}

was found to be (0.061±0.006)%, differing from previous results.

{}^{20}O

, formed in the

{}^{18}O

(

{}^{18}O

{}^{16}O

)

This publication has 22 references indexed in Scilit:

Decay schemes ofAl30,P30, andO20