A 5V-only EEPROM with internal program/erase control
- 1 January 1983
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
An 8K×8 EEPROM, using double-poly, silicon gate, nitrox technology, will be described. A 176μm2cell size has been achieved with 3μ design rules. Internal high voltage generation and program/erase control provides 5V-only external interfacing.Keywords
This publication has 1 reference indexed in Scilit:
- A 16 kbit electrically erasable PROM using n-channel Si-gate MNOS technologyIEEE Journal of Solid-State Circuits, 1980