A SiGe BiCMOS 16-element phased-array transmitter for 60GHz communications
- 1 February 2010
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01936530,p. 218-219
- https://doi.org/10.1109/isscc.2010.5433956
Abstract
A 60 GHz phased-array transmitter for multi-Gb/s non-line-of-sight links is fully integrated in a 0.12 ¿m SiGe BiCMOS process. It consists of an up-conversion chain with synthesizer, a power distribution tree and 16 phase-shifting front-ends. The IC occupies 44 mm 2 , draws 1.2 W excluding front-ends, and delivers 9 to 13.5 dBm OP 1dB per element drawing 164 to 313 mW per front-end.Keywords
This publication has 4 references indexed in Scilit:
- A 60-GHz band CMOS phased array transmitter utilizing compact baseband phase shiftersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- A bidirectional TX/RX four element phased-array at 60GHz with RF-IF conversion block in 90nm CMOS processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- A Millimeter-Wave (40–45 GHz) 16-Element Phased-Array Transmitter in 0.18-$\mu$m SiGe BiCMOS TechnologyIEEE Journal of Solid-State Circuits, 2009
- A 4-Gbps Uncompressed Wireless HD A/V Transceiver ChipsetIEEE Micro, 2008