Optical properties and carrier dynamics of InAs/InP(113)B quantum dots emitting between 1.3 and for laser applications
- 1 April 2003
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 17, 56-59
- https://doi.org/10.1016/s1386-9477(02)00749-x
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emissionSemiconductor Science and Technology, 2002
- Room temperature laser emission of 1.5 m from InAs/InP(311)B quantum dotsSemiconductor Science and Technology, 2002
- Height dispersion control of InAs/InP quantum dots emitting at 1.55 μmApplied Physics Letters, 2001
- Low chirp observed in directly modulated quantum dot lasersIEEE Photonics Technology Letters, 2000
- How a quantum-dot laser turns onApplied Physics Letters, 2000
- Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structureIEEE Photonics Technology Letters, 2000
- The present status of quantum dot lasersPhysica E: Low-dimensional Systems and Nanostructures, 1999
- Novel prospects for self-assembled InAs/GaAs quantum boxesJournal of Crystal Growth, 1999
- Long-wavelength lasing from InAs self-assembled quantum dots on (311) B InPApplied Physics Letters, 1998
- Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layerIEEE Journal of Selected Topics in Quantum Electronics, 1997