Room temperature laser emission of 1.5 m from InAs/InP(311)B quantum dots
- 22 January 2002
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 17 (2) , L5-L7
- https://doi.org/10.1088/0268-1242/17/2/102
Abstract
We report on the 1.5 μm laser emission from InAs quantum dots (QDs) grown on a InP(311)B substrate. The control of the optical wavelength emission is obtained by a two-step modified growth procedure, called the 'double cap' procedure. This enables us to obtain a 1.55 μm optical emission from InAs/InP(311)B QDs, with a narrow height dispersion. Laser emission on a six-stacked InAs QD layer sample has been demonstrated with optical excitation at room temperature. Lasing has been obtained on an excited state, for a low optical excitation density of 10 kW cm−2. This shows that a QD laser could emit at the optical telecommunication wavelength.Keywords
This publication has 9 references indexed in Scilit:
- Height dispersion control of InAs/InP quantum dots emitting at 1.55 μmApplied Physics Letters, 2001
- Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substratesApplied Physics Letters, 2001
- Low chirp observed in directly modulated quantum dot lasersIEEE Photonics Technology Letters, 2000
- 1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour depositionSemiconductor Science and Technology, 2000
- The present status of quantum dot lasersPhysica E: Low-dimensional Systems and Nanostructures, 1999
- Wavelength tuning of InAs quantum dots grown on (311)B InPApplied Physics Letters, 1999
- Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)Applied Physics Letters, 1998
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Low threshold quantum dot injection laseremitting at 1.9 µmElectronics Letters, 1998