1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

This publication has 14 references indexed in Scilit:

• Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
  Applied Physics Letters, 1999
• Single transverse mode operation of long wavelength(~1.3 µm)InAs GaAs quantum dot laser
  Electronics Letters, 1999
• Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
  IEEE Photonics Technology Letters, 1999
• 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
  IEEE Photonics Technology Letters, 1999
• Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
  IEEE Photonics Technology Letters, 1999
• Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In _0.15 Ga _0.85 As quantum well
  Electronics Letters, 1999
• 1.3 µm GaAs-based laser using quantum dotsobtained byactivated spinodal decomposition
  Electronics Letters, 1999
• 1.3 μm room-temperature GaAs-based quantum-dot laser
  Applied Physics Letters, 1998
• Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck
  Applied Physics Letters, 1996
• Self-Formed In_0.5Ga_0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µm
  Japanese Journal of Applied Physics, 1994