A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier
- 12 December 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 43 (12) , 2747-2758
- https://doi.org/10.1109/jssc.2008.2004870
Abstract
Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed- loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135degC under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%.Keywords
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