Preparation of platinum silicides by reactive sputtering of Pt in SiH4 plasma
- 15 June 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (12) , 5477-5482
- https://doi.org/10.1063/1.334824
Abstract
Platinum‐silicon alloys have been prepared over a wide composition range by reactive magnetron sputtering of platinum in a SiH4 plasma. Studies on the stoichiometry of the films show that it depends sensitively on the silane partial pressure and the cathode potential. An analysis of the intensities of the emission lines of platinum and hydrogen present in the plasma indicates that at lower silicon concentrations the stoichiometry of the film bears a one‐to‐one correspondence with the stoichiometry of the plasma. X‐ray diffraction studies on the films deposited at room temperature show metastable products such as extended solid solutions on either side of the equilibrium phase field and the formation of a bcc phase (a=4.169 Å) for the Pt67Si33 alloy. Stoichiometric intermetallic phases Pt2Si, PtSi, and PtSi2 have been synthesized by depositing the films at 100, 300, and 500 °C, respectively.This publication has 4 references indexed in Scilit:
- High temperature stability of PtSi formed by reaction of metal with silicon or by cosputteringJournal of Applied Physics, 1983
- Metallization for very-large-scale integrated circuitsThin Solid Films, 1982
- Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy filmsJournal of Applied Physics, 1981
- Kinetics and mechanism of platinum silicide formation on siliconApplied Physics Letters, 1974