A New Method for Characterizing Dynamic Self-Heating in Soi Mosfets
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 118-119
- https://doi.org/10.1109/soi.1992.664822
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Use of noise thermometry to study the effects of self-heating in submicrometer SOI MOSFETsIEEE Electron Device Letters, 1992
- Electrical transient study of negative resistance in SOI MOS transistorsElectronics Letters, 1990
- Physical origin of negative differential resistance in SOI transistorsElectronics Letters, 1989