Reduced intervalley transfer in a GaAsAlGaAs heterojunction
- 1 March 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3-4) , 375-377
- https://doi.org/10.1016/0038-1101(88)90300-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Classical versus quantum mechanical calculation of the electron distribution at the n-AlGaAs/GaAs heterointerfaceIEEE Transactions on Electron Devices, 1986
- Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo methodJournal of Applied Physics, 1985
- Size effects on polar optical phonon scattering of 1-D and 2-D electron gas in synthetic semiconductorsJournal of Applied Physics, 1984
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Velocity-field characteristics of GaAs with Γc6-L c6-X c6 conduction-band orderingJournal of Applied Physics, 1977
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970