Effects of bandgap, lifetime, and other nonuniformities on diode laser thresholds and slope efficiencies
- 1 April 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 3 (2) , 475-484
- https://doi.org/10.1109/2944.605697
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Controlling filamentation in broad-area semiconductor lasers and amplifiersApplied Physics Letters, 1996
- Nonlinear mechanisms of filamentation in broad-area semiconductor lasersIEEE Journal of Quantum Electronics, 1996
- Time-domain optical wave propagation in disordered and nonuniform guiding structuresIEEE Journal of Quantum Electronics, 1996
- Type-II quantum-well lasers for the mid-wavelength infraredApplied Physics Letters, 1995
- Strain dependence of threshold current in fixed-wavelength GaInP laser diodesIEEE Journal of Selected Topics in Quantum Electronics, 1995
- Spontaneous filamentation in broad-area diode laser amplifiersIEEE Journal of Quantum Electronics, 1994
- Interface roughness scattering in semiconducting and semimetallic InAs-Ga1−xInxSb superlatticesApplied Physics Letters, 1993
- Spatial evolution of filaments in broad area diode laser amplifiersApplied Physics Letters, 1993
- The semiconductor waveguide facet reflectivity problemIEEE Journal of Quantum Electronics, 1993
- Does luminescence show semiconductor interfaces to be atomically smooth?Applied Physics Letters, 1990