A correlation between solid solubility and tetrahedral radius of III, IV and V group impurities in silicon

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Abstract
The strain entropy of substitutional Group III, IV and V impurities in silicon has been calculated from the experimental solid solubility taking into account the electronic, vibrational and polarization contributions. A correlation between differences of tetrahedral radii and strain entropy is found. Silicon is perhaps the most studied substance after water. In spite of this, there is, at present, no unified description of the solid solubility of impurities in silicon. The usual description correlates the distribution coefficient of an impurity between solid and liquid silicon to its tetrahedral radius. Impurities of the same group lie on the same experimental line (Trumbore 1960). In this work we shall give a correlation between strain entropy and tetrahedral radius that brings together On the same line 10 elements of Groups IIIA, IVA and VA (about 10% of the Periodic Table), and allows the prediction of solid solubility for two other elements.

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