Growth and characterization of high-quality MOCVD AlGaAs/GaAs single quantum wells
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 398-405
- https://doi.org/10.1016/0022-0248(84)90441-x
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Some characteristics of the GaAs/GaAlAs graded-index separate-confinement heterostructure quantum well laser structureApplied Physics Letters, 1984
- Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1 percent/kh) at 70°CIEEE Electron Device Letters, 1983
- cw electro-optical characteristics of graded-index waveguide separate-confinement heterostructure lasers with proton-delineated stripeApplied Physics Letters, 1983
- Visible cw single quantum well (AlGa)As diode lasersApplied Physics Letters, 1983
- Very narrow graded-barrier single quantum well lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1982
- Stable fan filter design using two-variable reactance functionsElectronics Letters, 1982
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982
- cw narrow beam (AlGa)As multiquantum-well heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1981
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Room-temperature laser operation of quantum-well Ga(1−x)AlxAs-GaAs laser diodes grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978