Electrical properties of annealed films of indium arsenide

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Abstract
Indium arsenide has been evaporated by the `three temperature' method, protected and sealed by an insulating film, and annealed to as high a temperature as possible before the onset of mechanical cracking prevented the seal being effective. The annealed film was evaluated by a Hall-effect measurement at room temperature. Annealing temperatures of up to 600°C were achieved with films protected by an evaporated film of silicon oxide, which resulted in InAs films with mobilities approaching 03 m2V−1S−1. The carrier densities of films prepared at a substrate temperature of 300°C always remained above 1024 m−3 before and after annealing, even when high-purity starting material was used.