Variable growth modes of CaF2 on Si(111) determined by x-ray photoelectron diffraction

26 April 1993

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 62 (17) , 2057-2059
https://doi.org/10.1063/1.109478

Abstract

Chemical discrimination of bulk and interface Ca 2p x‐ray photoelectron diffraction modulations is used to identify three growth regimes during the initial stages of CaF₂ epitaxy on Si(111). Low flux, high temperature conditions produce island growth atop a nonwetting, chemically reacted Ca‐F interface layer. Changing the growth kinetics by increasing the flux produces more laminar growth. Lowering the substrate temperature produces a more stoichiometric CaF₂ interface layer that results in immediate wetting and laminar growth.

Keywords

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