Hydrogen passivation and thermal reactivation of zinc double acceptors in silicon
- 1 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 4 (1-4) , 31-34
- https://doi.org/10.1016/0921-5107(89)90211-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Thermal ionization rates and energies of holes at the double acceptor zinc centers in siliconPhysica Status Solidi (a), 1972
- Diffusion and Electrical Behavior of Zinc in SiliconPhysical Review B, 1957