Eigenschaften einiger Störstellenkomplexe von Zink in Silizum
- 16 July 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 72 (1) , 177-187
- https://doi.org/10.1002/pssa.2210720118
Abstract
No abstract availableKeywords
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- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- Electron Spin Resonance in SemiconductorsPublished by Elsevier ,1962