Over 500 GHz InP heterojunction bipolar transistors
- 13 July 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Single heterojunction bipolar transistors (SHBTs) with cutoff frequencies as high as 520 GHz operating at current densities over 1400 kA/cm/sup 2/ have been demonstrated. We compare state-of-the-art HBT technologies, focusing on the aspects of scalability and speed, breakdown voltage, thermal properties, and the demands future applications will require from these high-performance devices.Keywords
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