High-speed InP/InGaAs DHBTs with ballistic collector launcher structure
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 35.3.1-35.3.4
- https://doi.org/10.1109/iedm.2001.979629
Abstract
We demonstrate high-speed InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with significantly improved collector carrier transport. The proposed collector design scheme allows for using moderate collector thickness to achieve high f/sub max/ (/spl sim/300 GHz) while maintaining high f/sub T/ (/spl sim/200 GHz). The DHBTs will meet the demand of ultra-high-speed applications for both high f/sub T/ and high f/sub max/.Keywords
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