Inclusion of Strain Effect in Miscibility Gap Calculations for III–V Semiconductors

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Abstract
A new and simple treatment of miscibility gap calculations for ternary and quaternary semiconductors including strain is presented. Our treatment leads to the same result as that of previous treatments, in the case of lattice-matched layers, but provides a more realistic and rigorous description for coherently strained layers. We also discuss the differences between our treatment and previous treatments, including misfit strain caused by the substrate. Our treatment is applied in miscibility gap calculations for GaInNAs and GaInAsSb material systems. Theoretical predictions by miscibility gap calculations are compared with growth experiments and show reasonable agreement.