Well size dependence of exciton linewidths in semiconductor quantum wells
- 30 November 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 68 (5) , 483-485
- https://doi.org/10.1016/0038-1098(88)90843-5
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Temperature dependent exciton linewidths in quantum wellsSuperlattices and Microstructures, 1987
- Electric-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rulesIEEE Journal of Quantum Electronics, 1986
- Exciton linewidth in semiconducting quantum-well structuresPhysical Review B, 1986
- Two-wavelength absorption modulation spectroscopy of bandtail absorption in GaAs quantum wellsApplied Physics Letters, 1986
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structuresJournal of the Optical Society of America B, 1985
- Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1984
- Large room-temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structuresApplied Physics Letters, 1982
- Exciton binding energy in quantum wellsPhysical Review B, 1982