Etch characteristics of an amorphous refractory absorber
- 31 January 1996
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 30 (1-4) , 211-214
- https://doi.org/10.1016/0167-9317(95)00229-4
Abstract
No abstract availableKeywords
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- Pattern formation in amorphous WNx by low temperature electron cyclotron resonance etching for fabrication of x-ray maskJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
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