A new "critical-current at linear-threshold" method for direct extraction of deep-submicron MOSFET effective channel length
- 1 July 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (7) , 1492-1494
- https://doi.org/10.1109/16.772497
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A simple and unambiguous definition of threshold voltage and its implications in deep-submicron MOS device modelingIEEE Transactions on Electron Devices, 1999
- Practical accuracy analysis of some existing effective channel length and series resistance extraction methods for MOSFET'sIEEE Transactions on Electron Devices, 1998
- Nonscaling of MOSFET's linear resistance in the deep submicrometer regimeIEEE Electron Device Letters, 1998
- An effective channel length determination method for LDD MOSFETsIEEE Transactions on Electron Devices, 1996
- On "effective channel length" in 0.1-μm MOSFETsIEEE Electron Device Letters, 1995
- A new 'shift and ratio' method for MOSFET channel-length extractionIEEE Electron Device Letters, 1992
- Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET'sIEEE Transactions on Electron Devices, 1987
- On the accuracy of channel length characterization of LDD MOSFET'sIEEE Transactions on Electron Devices, 1986
- A New Method to Determine Effective MOSFET Channel LengthJapanese Journal of Applied Physics, 1979