Nonscaling of MOSFET's linear resistance in the deep submicrometer regime
- 1 April 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (4) , 131-133
- https://doi.org/10.1109/55.663537
Abstract
This paper investigates the scaling properties of deep submicron MOSFET's and shows that, while in a wide range of channel lengths they can be represented as composed by a scaling intrinsic and a nonscaling parasitic part, this picture does no longer hold for shorter transistors. A nonscaling of the total resistance R/sub TOT/=[V/sub DS//I/sub DS/] of short devices is observed, and its impact on parasitic resistances and effective channel length extraction is discussed. A possible explanation is suggested in relation to the two-dimensional substrate doping redistribution linked to reverse-short-channel effects.Keywords
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