Abstract
A correlated method for the characterisation of deep centres is presented. It permits the simultaneous determination, by the electron paramagnetic resonance technique, of the microscopic structure of a defect as well as parameters also determinable by different techniques based on thermally stimulated relaxation such as DLTS, TSC, TSL: population transients, thermal emission rates and ionisation energy. This technique, which will be of help for the identification of defects, for which only the electrical signature is known, has been applied to CdF2:Eu.