A phenomenological model of ion-induced crystallization and amorphization
- 1 October 1991
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 6 (10) , 2103-2108
- https://doi.org/10.1557/jmr.1991.2103
Abstract
A simple phenomenological model is developed to explain, qualitatively, the observed temperature and ion flux dependences of either recrystallization or further amorphous growth of amorphous layers in semiconductors when exposed to ion irradiation. The model includes radiation assisted annealing processes and thermally modified amorphous zone production at the amorphous-crystal interface.Keywords
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