Nitride, Nitrided Oxide and Oxidized Nitride for Thin Dielectrics
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
In this paper, comparisons of material and electrical parameters between qate and interpoly dielectrics consistinq of thermal oxides, nitrides, nitrided oxides and oxidized nitrides are reported. A range of dielectrics, 5 nm to 30 nm thick, are thermally grown using a matrix of oxidation cycles, ammonia concentration and nitridation temperatures and pressures. Fabrication of polysilicon gate and interpoly capacitors is typical of industry standards. AES, RBS and ellipsometric analysis of dielectric material properties are discussed and electrical characterization results are presented.Keywords
This publication has 2 references indexed in Scilit:
- Electrical Characteristics of High Pressure Nitrided OxidesMRS Proceedings, 1986
- Positive charge generation in thin SiO2 films during nitridation processApplied Physics Letters, 1985