Evidence of room-temperature exciton by magnetophotoreflectance in epitaxial GaAs and quantum well structures
- 21 March 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (12) , 984-986
- https://doi.org/10.1063/1.99249
Abstract
Photoreflectance experiments with magnetic fields up to 14.5 T are performed on epitaxial GaAs and GaAs/Ga1−xAlxAs quantum well samples at room temperature and 2 K. Our experiments show unique and direct evidence that photoreflectance structures are excitonic transitions in all of the above cases.Keywords
This publication has 14 references indexed in Scilit:
- Theory of magnetoexcitons in quantum wellsPhysical Review Letters, 1987
- Photoreflectance modulation mechanisms in GaAs-As multiple quantum wellsPhysical Review B, 1987
- Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theoryApplied Physics Letters, 1986
- Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctionsApplied Physics Letters, 1985
- Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1984
- Large room-temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structuresApplied Physics Letters, 1982
- Observation of exciton quenching in GaAs at room temperature using electrolyte electroreflectanceSolid State Communications, 1980
- Electric-Field—Induced Interference Effects at the Ground Exciton Level in GaAsPhysical Review Letters, 1972
- Photoreflectance Line Shape at the Fundamental Edge in Ultrapure GaAsPhysical Review B, 1970
- Theory of fine structure on the absorption edge in semiconductorsJournal of Physics and Chemistry of Solids, 1959