Ohmic contacts to p-type cadmium telluride and cadmium mercury telluride
- 14 December 1983
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 16 (12) , 2333-2340
- https://doi.org/10.1088/0022-3727/16/12/011
Abstract
The different techniques of making ohmic contacts to p-type CdTe are reviewed and discussed. Mercury telluride, whose work-function matches perfectly that of p-type CdTe, is shown to be more favourable than Au or Pt. The HgTe contacts deposited by close spacing isothermal growth present a room temperature specific contact resistance ten times lower than so far reported. Hall effect measurements have been performed down to low temperatures on several undoped p-type CdTe and Cd0.7Hg0.3Te crystals. Ionisation energies of 0.05-0.07 and 0.13 eV for CdTe and 0.024 eV for Cd0.7Hg0.3Te have been determined and the nature of the responsible centres discussed.Keywords
This publication has 22 references indexed in Scilit:
- Ohmic contacts to p-type CdTe by pulsed laser heatingJournal of Crystal Growth, 1982
- Low resistance contacts to p-type cadmium tellurideJournal of Electronic Materials, 1982
- Transition resistances of ohmic contacts to p-type cdte and their time-dependent variationJournal of Electronic Materials, 1981
- Ohmic contact and impurity conduction in P−doped CdTeJournal of Applied Physics, 1975
- Models for contacts to planar devicesSolid-State Electronics, 1972
- Ohmic Electrical Contacts to P-Type ZnTe and ZnSe[sub x]Te[sub 1−x]Journal of the Electrochemical Society, 1967
- Field Effect in CdTePhysica Status Solidi (b), 1966
- Band structure of HgTe and HgTe-CdTe alloysSolid State Communications, 1964
- Shallow and deep acceptor states in CdTePhysics Letters, 1963
- Band edge emission properties of CdTeJournal of Physics and Chemistry of Solids, 1961