Novel technique for MOS pulse capacitance measurements in C(V) and C(t) mode

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Abstract
For the purpose of MOS doping profile evaluation and generation time constant analysis a pulse capacitance measurement setup has been developed. The principle of operation consists in the capacitance of MOS varactors tuning the resonant frequency of a parallel resonant circuit. The range of capacitance measurement is 0–1000 pF, corresponding to the MHz range. First the pulse voltage ranges from 0 to ±100 V, and second the resolution of time ranges from 1 msec to 100 sec. So MOS‐doping profiles as well as transients of capacitance are available. The accuracy of capacitance measurements is better than 0.1%. Output of data is done by punched tape for subsequent evaluation on a desk calculator.
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