An analytic form for the SIMS response function measured from ultra‐thin impurity layers
- 1 May 1994
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 21 (5) , 310-315
- https://doi.org/10.1002/sia.740210508
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- SIMS Profile quantification by maximum entropy deconvolutionSurface and Interface Analysis, 1993
- Theoretical calculations of the broadening of dilute Si, Al and Be doped δ layers in GaAs during SIMS depth profilingVacuum, 1993
- SIMS response functions for MBE grown delta layers in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Secondary ion mass spectrometry depth profiling of boron, antimony, and germanium deltas in silicon and implications for profile deconvolutionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- SIMS profile simulation using delta function distributionsSurface and Interface Analysis, 1991
- Theoretical and experimental studies of the broadening of dilute delta‐doped Si spikes in GaAs during SIMS depth profilingSurface and Interface Analysis, 1990
- Beam-induced broadening effects in sputter depth profilingVacuum, 1984
- Profile distortions and atomic mixing in SIMS analysis using oxygen primary ionsNuclear Instruments and Methods in Physics Research, 1981
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969